Properties of all-thin-film glass/ITO/WO3:H/Ta2O5/NiOx/ITO electrochromic devices prepared by magnetron sputtering

被引:33
|
作者
Che, Xiaoqi [1 ]
Wu, Zhonghou [1 ]
Dong, Guobo [1 ]
Diao, Xungang [1 ]
Zhou, Yuliang [1 ]
Guo, Junji [1 ]
Dong, Dongmei [1 ]
Wang, Mei [1 ]
机构
[1] Beihang Univ, Sch Phys & Nucl Energy Engn, Electrochrom Ctr, Beijing 100191, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
Electrochromic device; Hydrogenated tungsten trioxide; Thin film; Magnetron sputtering; WO3; COATINGS; THICKNESS; SYSTEM; NIOX;
D O I
10.1016/j.tsf.2018.07.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of WO3:H (similar to 450 nm) were prepared on indium fin oxide (ITO) coated glass by reactive direct current magnetron sputtering at room temperature. The visible transmittance of the original state, and the X-ray photoelectron spectroscopy analysis of WO3:H films prove that H+ ions have been introduced into the structure of WO3. Based on the optimized parameters of WO3:H thin film, the Glass/ITO/WO3:H/Ta2O5/NiOx/ITO electrochromic devices (ECDs) are prepared monolithically by magnetron sputtering. Different applied voltages of 1.0, 2.0 and 3.0 V were applied to the ECD for investigating its influence on the ECD's optical contrast and cycle life. Though the ECD can get a higher contrast about 42% at 550 nm under 3.0 V voltage, however, it will be destructed quickly. When the operating voltage is 2.0 V, the ECD has a stable cycle performance with the optical contrast of > 30%.
引用
收藏
页码:6 / 12
页数:7
相关论文
共 50 条
  • [31] Structures and properties of a Ta2O5 thin film deposited by dc magnetron reactive sputtering in a pure O2 atmosphere
    Chen, Guoping
    Li, Lingzhen
    Zhang, Suixin
    Zhang, Haokang
    Vacuum, 1990, 41 (4 -6 Pt2) : 1204 - 1206
  • [32] All-solid-state electrochromic device composed of WO3 and Ni(OH)2 with a Ta2O5 protective layer
    Ahn, KS
    Nah, YC
    Sung, YE
    Cho, KY
    Shin, SS
    Park, JK
    APPLIED PHYSICS LETTERS, 2002, 81 (21) : 3930 - 3932
  • [33] Reactive dual magnetron sputtering of Ta2O5 and Al2O3: Optical and structural properties and thin film applications.
    Pearce, S. J.
    Esfandiarijahromi, H.
    Charlton, M. D. B.
    OXIDE-BASED MATERIALS AND DEVICES III, 2012, 8263
  • [34] Optical properties of amorphous Ta2O5 thin films deposited by RF magnetron sputtering
    Chen, Xinyi
    Bai, Rui
    Huang, Meidong
    OPTICAL MATERIALS, 2019, 97
  • [35] Enhancement of long-term cyclic durability of electrochromic WO3 thin films via Ta2O5 passivation
    Yang, Jeonghun
    Kang, Kwang-Mo
    Oh, Sehyun
    Lee, Yu Jin
    Nah, Yoon-Chae
    Kim, Dong Hun
    JOURNAL OF ALLOYS AND COMPOUNDS, 2025, 1013
  • [36] Effect of V2O5 Concentration on Structural and Optical Properties of WO3 Thin Films Prepared by RF Magnetron Sputtering
    Meenakshi, M.
    Gowthami, V.
    Perumal, P.
    Sanjeeviraja, C.
    LIGHT AND ITS INTERACTIONS WITH MATTER, 2014, 1620 : 307 - 314
  • [37] STRUCTURES AND PROPERTIES OF A TA2O5 THIN-FILM DEPOSITED BY DC MAGNETRON REACTIVE SPUTTERING IN A PURE O2 ATMOSPHERE
    CHEN, GP
    LI, LZ
    ZHANG, SX
    ZHANG, HK
    VACUUM, 1990, 41 (4-6) : 1204 - 1206
  • [38] Preparation and thermal volatility characteristics of In2O3/ITO thin film thermocouple by RF magnetron sputtering
    Liu, Yantao
    Ren, Wei
    Shi, Peng
    Liu, Dan
    Liu, Ming
    Jing, Weixuan
    Tian, Bian
    Ye, Zuoguang
    Jiang, Zhuangde
    AIP ADVANCES, 2017, 7 (11):
  • [39] The structural and electrical properties of Ta2O5 thin films prepared by DC sputtering method
    Rathee, Kanta
    Kumar, Mukesh
    Malik, B. P.
    ADVANCED MATERIALS IN MICROWAVES AND OPTICS, 2012, 500 : 317 - +
  • [40] THIN-FILMS OF AL2O3 AND TA2O5 OBTAINED BY MAGNETRON REACTIVE SPUTTERING
    MUTIHAC, R
    OPREA, A
    REVUE ROUMAINE DE CHIMIE, 1991, 36 (1-3) : 49 - 54