Properties of all-thin-film glass/ITO/WO3:H/Ta2O5/NiOx/ITO electrochromic devices prepared by magnetron sputtering

被引:33
|
作者
Che, Xiaoqi [1 ]
Wu, Zhonghou [1 ]
Dong, Guobo [1 ]
Diao, Xungang [1 ]
Zhou, Yuliang [1 ]
Guo, Junji [1 ]
Dong, Dongmei [1 ]
Wang, Mei [1 ]
机构
[1] Beihang Univ, Sch Phys & Nucl Energy Engn, Electrochrom Ctr, Beijing 100191, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
Electrochromic device; Hydrogenated tungsten trioxide; Thin film; Magnetron sputtering; WO3; COATINGS; THICKNESS; SYSTEM; NIOX;
D O I
10.1016/j.tsf.2018.07.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of WO3:H (similar to 450 nm) were prepared on indium fin oxide (ITO) coated glass by reactive direct current magnetron sputtering at room temperature. The visible transmittance of the original state, and the X-ray photoelectron spectroscopy analysis of WO3:H films prove that H+ ions have been introduced into the structure of WO3. Based on the optimized parameters of WO3:H thin film, the Glass/ITO/WO3:H/Ta2O5/NiOx/ITO electrochromic devices (ECDs) are prepared monolithically by magnetron sputtering. Different applied voltages of 1.0, 2.0 and 3.0 V were applied to the ECD for investigating its influence on the ECD's optical contrast and cycle life. Though the ECD can get a higher contrast about 42% at 550 nm under 3.0 V voltage, however, it will be destructed quickly. When the operating voltage is 2.0 V, the ECD has a stable cycle performance with the optical contrast of > 30%.
引用
收藏
页码:6 / 12
页数:7
相关论文
共 50 条
  • [1] Properties of NiOx and its influence upon all-thin-film ITO/NiOx/LiTaO3/WO3/ITO electrochromic devices prepared by magnetron sputtering
    Song, Xingwang
    Dong, Guobo
    Gao, Fangyuan
    Xiao, Yu
    Liu, Qirong
    Diao, Xungang
    VACUUM, 2015, 111 : 48 - 54
  • [2] Electrochromic properties of NiOx:H films deposited by DC magnetron sputtering for ITO/NiOx:H/ZrO2/WO3/ITO device
    Dong, Dongmei
    Wang, Wenwen
    Dong, Guobo
    Zhou, Yuliang
    Wu, Zhonghou
    Wang, Mei
    Liu, Famin
    Diao, Xungang
    APPLIED SURFACE SCIENCE, 2015, 357 : 799 - 805
  • [3] Preparation and Properties of All-solid-state Inorganic Thin Film Glass/ITO/WO3/LiNbO3/NiOx/ITO Electrochromic Device
    Wu Zhonghou
    Diao Xungang
    Dong Guobo
    SELECTED PAPERS OF THE PHOTOELECTRONIC TECHNOLOGY COMMITTEE CONFERENCES HELD NOVEMBER 2015, 2016, 9796
  • [4] Enhanced transmittance modulation of ITO/NiOx/ZrO2:H/WO3/ITO electrochromic devices
    Zhou, Yuliang
    Diao, Xungang
    Dong, Guobo
    Wu, Zhonghou
    Dong, Dongmei
    Wang, Mei
    IONICS, 2016, 22 (01) : 25 - 32
  • [5] Enhanced transmittance modulation of ITO/NiOx/ZrO2:H/WO3/ITO electrochromic devices
    Yuliang Zhou
    Xungang Diao
    Guobo Dong
    Zhonghou Wu
    Dongmei Dong
    Mei Wang
    Ionics, 2016, 22 : 25 - 32
  • [6] Electrochromic properties of tungsten trioxide (WO3) layers grown on ITO/glass substrates by magnetron sputtering
    Tuna, O.
    Sezgin, A.
    Budakoglu, R.
    Turkuz, S.
    Parlar, H.
    VACUUM, 2015, 120 : 28 - 31
  • [7] Preparation and Properties of Electrochromic Device of ITO/WO3/LiTaO3/NiOx/ITO in Full Solid Film
    Zhang Jinwei
    Diao Xungang
    Wang Huaiyi
    Wang Tianmin
    Wu Zhe
    Shu Yuanjie
    RARE METAL MATERIALS AND ENGINEERING, 2008, 37 (09) : 1688 - 1692
  • [8] All-Solid-Thin Film Electrochromic Devices Consisting of Layers ITO / NiO / ZrO2 / WO3 / ITO
    Patel, K. J.
    Desai, M. S.
    Panchal, C. J.
    Deota, H. N.
    Trivedi, U. B.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2013, 5 (02)
  • [9] Electrochromic performance of an all-solid-state ITO/WO3/Li-NbO3/V2O5/ITO electrochromic device deposited by magnetron sputtering
    Li, Ri-Jun
    Chen, Hsi-Chao
    Yen, Yu-Hung
    Liu, Tan-Fu
    Guo, Bo-Jun
    Lai, Chi-Yang
    Huang, Chu-Han
    OPTICAL MANIPULATION AND STRUCTURED MATERIALS CONFERENCE 2021, 2021, 11926
  • [10] An all-thin-film inorganic electrochromic device monolithically fabricated on flexible PET/ITO substrate by magnetron sputtering
    Liu, Qirong
    Dong, Guobo
    Xiao, Yu
    Gao, Fangyuan
    Wang, Mei
    Wang, Qi
    Wang, Shuo
    Zuo, Huaping
    Diao, Xungang
    MATERIALS LETTERS, 2015, 142 : 232 - 234