Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

被引：5
|
作者：
Aqariden, F [1 ]
Shih, HD [1 ]
Turner, AM [1 ]
Chandra, D [1 ]
Liao, PK [1 ]
机构：
[1] DRS Infrared Technol LP, Dallas, TX 75374 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 06期
关键词：
MBE; HgCdTe; CdZnTe; heteroepitaxy;
D O I：
10.1007/s11664-000-0214-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A series of n-type, indium-doped Hg1-xCdxTe (x similar to 0.225) layers were grown on Cd0.96Zn0.04Te(311)B substrates by molecular beam epitaxy (MBE). The Cd0.96Zn0.04Te(311)B substrates (2 cm x 3 cm) were prepared in this laboratory by the horizontal Bridgman method using double-zone-refined 6N source materials. The Hg1-xCdxTe(311)B epitaxial films were examined by optical microscopy, defect etching, and Hall measurements. Preliminary results indicate that the n-type Hg1-4CdxTe(311)B and Hg1.xCdxTe(211)B films (x similar to 0.225) grown by MBE have comparable morphological, structural, and electrical quality, with the best 77 K Hall mobility being 112,000 cm(2)/.Vsec at carrier concentration of 1.9 x 10(+15) cm(-3).
引用
收藏
页码：727 / 728
页数：2
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