Riding the crest of a new wave in memory

NOVORAM (nonvolatile random access memory) is a new concept for fast, bit-addressable nonvolatile memory based on crested barriers. It is a convenient new paradigm that may enable the Moore-law progress of semiconductor memory technology to be extended well into the nanoscale, terabit range. However, it still faces the challenges of CMOS-compatible deposition of high-quality, few nanometer layers of wide-bandgap semiconductors.