NOVEL SEMICONDUCTOR DEVICES BASED ON SOI SUBSTRATE

被引：0

作者：

Xiao, K. ^{[1
]}

Liu, J. ^{[1
]}

Deng, J. N. ^{[1
]}

Jiang, Y. L. ^{[2
]}

Bao, W. Z. ^{[2
]}

Zaslavsky, A. ^{[3
,4
]}

Cristoloveanu, S. ^{[5
]}

Gong, X. ^{[6
]}

Wan, J. ^{[1
]}

机构：

[1] Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[2] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[3] Brown Univ, Dept Phys, Providence, RI 02912 USA

[4] Brown Univ, Sch Engn, Providence, RI 02912 USA

[5] INP Grenoble Minatec, IMEP LAHC, CS50257, F-38016 Grenoble, France

[6] Natl Univ Singapore NUS, Dept Elect & Comp Engn ECE, Singapore, Singapore

来源：

2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

Silicon-on-insulator (SOI); low subthreshold swing; memory; photodetector; image sensor; 2D heterojunction materials;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we review our recent studies on several novel devices built on silicon-on-insulator (SOI) substrates. The sharp-switching Z(2)-FET, based on a feedback mechanism, has been demonstrated as suitable for many applications. The PISD, capable of in-situ photoelectron sensing, has been used as a one-transistor active pixel sensor (1T-APS). Furthermore, an SOI/MoS2 heterojunction FET has been demonstrated as both a photodetector with a dynamic response spectrum and as a novel one-transistor wavelength detector (1T-WD) with an output signal sensitive to the variation of wavelength rather than intensity.

引用

页数：2

共 50 条

[21] Silicon photonics devices based on SOI structures
Itabashi, S.
Yamada, K.
Fukuda, H.
Tsuchizawa, T.
Watanabe, T.
Shinojima, H.
Ishi, H.
Takahashi, R.
Ishikawa, Y.
Wada, K.
ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15, 2011, 35 (05): : 227 - 236
[22] DEVICES BASED ON SEMICONDUCTOR NANOWIRES
Erts, D.
Meija, R.
Birjukovs, P.
Andzane, J.
Studers, M.
Lohmus, R.
Holmes, J. D.
CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2009, : 37 - +
[23] The optimization of deep trench isolation structure for high voltage devices on SOI substrate
Qian, Qinsong
Sun, Weifeng
Han, Dianxiang
Liu, Siyang
Su, Zhan
Shi, Longxing
SOLID-STATE ELECTRONICS, 2011, 63 (01) : 154 - 157
[24] New high frequency model for substrate crosstalk noise injected by SOI devices
Karami, M. A.
Masoumi, N.
Forouzandeh, B.
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2006, : 495 - +
[25] Nanoscale Semiconductor "X" on Substrate "Y" - Processes, Devices, and Applications
Madsen, Morten
Takei, Kuniharu
Kapadia, Rehan
Fang, Hui
Ko, Hyunhyub
Takahashi, Toshitake
Ford, Alexandra C.
Lee, Min Hyung
Javey, Ali
ADVANCED MATERIALS, 2011, 23 (28) : 3115 - 3127
[26] The investigation of charge transport properties of SOI semiconductor devices using a heavy ion microbeam
Hirao, T
Laird, JS
Mori, H
Onoda, S
Itoh, H
BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000, 2000, 78-79 : 395 - 399
[27] HETERODIODES AS A BASIS FOR DEVELOPMENT OF NOVEL SEMICONDUCTOR DEVICES
BONNET, D
RABENHORST, H
INTERNATIONALE ELEKTRONISCHE RUNDSCHAU, 1969, 23 (06): : 157 - +
[28] Novel gate dielectrics for nanoscale semiconductor devices
Bose, DN
Pal, S
Ray, SK
Chakraborty, BR
INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE-PART A, 2004, 78A (01): : 35 - 39
[29] Novel quantum hydrodynamic equations for semiconductor devices
Hosseini, Seyed Ebrahim
Faez, Rahim
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (3 A): : 1300 - 1304
[30] Novel semiconductor lasers and integrated photonic devices
He, Jian-Jun
Jin, Jialiang
Liu, Dekun
Jin, Lei
Lou, Min
Yu, Tingting
Wang, Lei
SEMICONDUCTOR LASERS AND APPLICATIONS IV, 2010, 7844

← 1 2 3 4 5 →