NOVEL SEMICONDUCTOR DEVICES BASED ON SOI SUBSTRATE

被引：0

作者：

Xiao, K. ^{[1
]}

Liu, J. ^{[1
]}

Deng, J. N. ^{[1
]}

Jiang, Y. L. ^{[2
]}

Bao, W. Z. ^{[2
]}

Zaslavsky, A. ^{[3
,4
]}

Cristoloveanu, S. ^{[5
]}

Gong, X. ^{[6
]}

Wan, J. ^{[1
]}

机构：

[1] Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[2] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[3] Brown Univ, Dept Phys, Providence, RI 02912 USA

[4] Brown Univ, Sch Engn, Providence, RI 02912 USA

[5] INP Grenoble Minatec, IMEP LAHC, CS50257, F-38016 Grenoble, France

[6] Natl Univ Singapore NUS, Dept Elect & Comp Engn ECE, Singapore, Singapore

来源：

2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

Silicon-on-insulator (SOI); low subthreshold swing; memory; photodetector; image sensor; 2D heterojunction materials;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we review our recent studies on several novel devices built on silicon-on-insulator (SOI) substrates. The sharp-switching Z(2)-FET, based on a feedback mechanism, has been demonstrated as suitable for many applications. The PISD, capable of in-situ photoelectron sensing, has been used as a one-transistor active pixel sensor (1T-APS). Furthermore, an SOI/MoS2 heterojunction FET has been demonstrated as both a photodetector with a dynamic response spectrum and as a novel one-transistor wavelength detector (1T-WD) with an output signal sensitive to the variation of wavelength rather than intensity.

引用

页数：2

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