Excitonic effects in ZnO nanowires and hollow nanotubes

被引:10
|
作者
Willander, M. [1 ,2 ]
Lozovik, Y. E. [3 ]
Zhao, Q. X. [1 ]
Nur, O. [1 ]
Hu, Q-H [2 ]
Klason, P. [2 ]
机构
[1] Linkoping Univ, Dept Sci & Technol, ITN, Campus Norrkoping, SE-60174 Norrkoping, Sweden
[2] Gothenburg Univ, Dept Phys, SE-41296 Gothenburg, Sweden
[3] Russian Acad Sci, Inst Spect, Troitsk 142190, Moscow Region, Russia
来源
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS XI | 2007年 / 6486卷
关键词
excitons; nano-structures; white LEDs;
D O I
10.1117/12.714005
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
dddEnergy levels and wave functions of ground and excited states of an exciton are calculated by the method of imaginary time. Energy levels as functions of radius of single and double wall nanotube are studied. Asymptotic behavior of energy levels at large and small values of the radius using perturbation theory and adiabatic approximation is considered. Spatially indirect exciton in semiconductor nanowire is also investigated. Experimental result from high quality reproducible ZnO nanowires grown by low temperature chemical engineering is presented. State of the art high brightness white light emitting diodes (HB-LEDs) are demonstrated from the grown ZnO nano-wires. The color temperature and color rendering index (CRI) of the HB-LEDs values was found to be (3250 K, 82), and (14000 K, 93), for the best LEDs, which means that the quality of light is superior to one obtained from GaN LEDs available on the market today. The role Of V-Zn and V-O on the emission responsible for the white light band as well as the peak position of this important wide band is thoroughly investigated in a systematic way.
引用
收藏
页数:12
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