Atomic geometry and theoretical scanning tunneling microscopy images of K chains on InAs(110)

被引:0
|
作者
Yi, H
Lee, S
Kim, H
机构
[1] Korea Inst Sci & Technol Informat, Supercomp Ctr, Taejon 305600, South Korea
[2] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305600, South Korea
关键词
scanning tunneling microscopy; K chains; InAs(110);
D O I
10.1016/j.apsusc.2004.06.137
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have performed total-energy density-functional calculations using ab initio pseudopotentials to investigate the atomic geometry and scanning tunneling microscopy (STM) of K adsorbed on the InAs(1 1 0) surface. We have identified the most favorable adsorption geometry formed by K adatoms occupying two almost degenerate adsorption sites. Based on this structure, we have simulated the STM images showing asymmetric and zigzag chain along the [110] direction for both negative and positive sample biases. The calculated STM images agree with the recent STM observation. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:200 / 205
页数:6
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