Investigation of n-GaN/p-SiC/n-SiC heterostructures

被引：6

作者：

Lebedev, A. A. ^{[1
]}

Ledyaev, O. Yu. ^{[1
]}

Strel'chuk, A. M. ^{[1
]}

Kuznetsov, A. N. ^{[1
]}

Nikolaev, A. E. ^{[1
]}

Zubrilov, A. S. ^{[1
]}

Volkova, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 01期

关键词：

hydride vapor phase epitaxy; solid phase epitaxy; semiconducting materials; heterojunction semiconductor devices;

D O I：

10.1016/j.jcrysgro.2006.11.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

With the use of sublimation epitaxy in vacuum and hydride vapor phase epitaxy (HVPE) a heterostructure n-GaN/p-6H-SiC/n-SiC on base top of n + 6H-SiC substrate was developed. The electrical properties of the n-GaN/p-6H-SiC heterojunction was investigated and prototype of hetero bipolar transistor (HBT) was fabricated. It was shown that this device can work up to similar to 350 degrees C. It was concluded that device parameters can be improved by further optimization. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：239 / 241

页数：3

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