Electronic transitions of the phosphorus-donor in 4H-and 6H-silicon carbide investigated by FTIR-transmission spectroscopy

被引：1
|
作者：
Heissenstein, H [1 ]
Sadowski, H [1 ]
Helbig, R [1 ]
机构：
[1] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2002年 / 324卷 / 1-4期
关键词：
SiC : P; FTIR; optical transition; NTD;
D O I：
10.1016/S0921-4526(02)01268-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have irradiated 4H- and 6H-silicon carbide (SiC) samples with neutrons with an energy distribution of a nuclear 3 reactor. In this way we generated a phosphorus doping of similar to4 x 10(15) cm(-3). We chose 40 and 50 mum thick epitaxial layers with a nitrogen doping of 7 x 10(14) cm(-3) on substrates with similar to10(18) cm(-3) of nitrogen. The substrates of these samples were sucessively removed by mechanical polishing and reactive ion etching. Afterwards the samples were characterized by IR-transmission. In this way we could distinguish between nitrogen- and phosphorus-related absorption. So we could assign in 4H- and in 6H-SiC several absorption lines to electronic transitions of the phosphorus donor. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：49 / 52
页数：4
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