Directed self-assembly of block copolymers on chemical patterns: A platform for nanofabrication

被引：188

作者：

Ji, Shengxiang ^{[1
]}

Wan, Lei ^{[2
]}

Liu, Chi-Chun ^{[3
]}

Nealey, Paul F. ^{[4
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, Key Lab Polymer Ecomat, 5625 Renmin St, Changchun 130022, Peoples R China

[2] HGST A Western Digital Co, 3403 Yerba Buena Rd, San Jose, CA 95135 USA

[3] IBM Albany NanoTech, 257 Fuller Rd, Albany, NY 12203 USA

[4] Univ Chicago, Inst Mol Engn, 5747 South Ellis Ave, Chicago, IL 60637 USA

来源：

PROGRESS IN POLYMER SCIENCE | 2016年 / 54-55卷

基金：

中国国家自然科学基金;

关键词：

Directed self-assembly; Chemical pattern; Block copolymer lithography; Nanofabrication; Pattern transfer; Bit-patterned media; SEQUENTIAL INFILTRATION SYNTHESIS; ELECTRON-BEAM LITHOGRAPHY; FLASH IMPRINT LITHOGRAPHY; ORDER-DISORDER TRANSITION; DOMAIN-BOUNDARY STRUCTURE; ATOMIC LAYER DEPOSITION; LONG-RANGE ORDER; THIN-FILMS; TRIBLOCK COPOLYMER; DENSITY MULTIPLICATION;

D O I：

10.1016/j.progpolymsci.2015.10.006

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Directed self-assembly (DSA) of block copolymers (BCPs) on lithographically defined chemically nanopatterned surfaces (or chemical patterns) combines advantages of conventional photolithography and polymeric materials and shows promise for meeting a sufficiently inclusive set of manufacturing constraints for applications in semiconductors and data storage. DSA attracts attention from both academia and industry and tremendous progress has been achieved in the past decade. This review highlights the development of DSA with an emphasis on efforts toward the integration of block copolymer lithography into the current lithographic process for the fabrication of devices for integrated circuits and bit-patterned media. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：76 / 127

页数：52

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