Formation of oxygen-induced Si(113)-3 x 2 facets on the Si(5512) surface

被引：1
|
作者：
Lee, SS
Song, HJ
Chung, JW
机构：
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Basic Sci Res Inst, Pohang 790784, South Korea
来源：
SURFACE SCIENCE | 2003年 / 531卷 / 03期
关键词：
oxygen; faceting; silicon; low energy electron diffraction (LEED); angle resolved photoemission;
D O I：
10.1016/S0039-6028(03)00570-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the formation of Si(1 1 3)-3 x 2 facets upon exposing oxygens on the Si(5 5 12) surface at an elevated temperature. These facets are found to form only for a limited range of oxygen exposure and exhibit a well-defined 3 x 2 LEED pattern. We also find the surface electronic state unique only to the facets in the valence band. The spectral feature of these electronic states and the behavior of a (1/3 1/2) LEED spot upon oxygen contents in the facets indicate that the formation is a heterogeneous mixture of the clean Si(1 1 3) facets free of oxygens and other facets containing oxygen atoms. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L357 / L362
页数：6
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