Formation of oxygen-induced Si(113)-3 x 2 facets on the Si(5512) surface

被引：1
|
作者：
Lee, SS
Song, HJ
Chung, JW
机构：
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Basic Sci Res Inst, Pohang 790784, South Korea
来源：
SURFACE SCIENCE | 2003年 / 531卷 / 03期
关键词：
oxygen; faceting; silicon; low energy electron diffraction (LEED); angle resolved photoemission;
D O I：
10.1016/S0039-6028(03)00570-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the formation of Si(1 1 3)-3 x 2 facets upon exposing oxygens on the Si(5 5 12) surface at an elevated temperature. These facets are found to form only for a limited range of oxygen exposure and exhibit a well-defined 3 x 2 LEED pattern. We also find the surface electronic state unique only to the facets in the valence band. The spectral feature of these electronic states and the behavior of a (1/3 1/2) LEED spot upon oxygen contents in the facets indicate that the formation is a heterogeneous mixture of the clean Si(1 1 3) facets free of oxygens and other facets containing oxygen atoms. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L357 / L362
页数：6
相关论文
共 50 条
  • [1] Doping-induced spin polarization on the pristine Si surface: a Si(5512)2 x 1 case
    Yeo, Kangmo
    Hahn, Jae Ryang
    Jeong, Sukmin
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2024, : 712 - 720
  • [2] Atomic structure of the Si(5512)-2 x 1 surface
    Kim, Hidong
    Li, Huiting
    Zhu, Yong-Zhe
    Hahn, J. R.
    Seo, Jae M.
    SURFACE SCIENCE, 2007, 601 (08) : 1831 - 1835
  • [3] Hydrogen interaction with a Si(113)-3 x 2 surface
    Mamiya, Kohei
    Yoshimura, Masamichi
    Ueda, Kazuyuki
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 : 263 - 265
  • [4] Na-induced reconstructions of the Si(113)3x2 surface
    Hwang, CC
    An, KS
    Park, RJ
    Lee, JB
    Kim, JS
    Park, CY
    Lee, SB
    Kimura, A
    Kakizaki, A
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 30 (02) : 341 - 344
  • [5] METASTABLE OXYGEN-INDUCED ORDERED STRUCTURE ON THE SI(001) SURFACE
    MEN, FK
    ERSKINE, JL
    PHYSICAL REVIEW B, 1994, 50 (15): : 11200 - 11203
  • [6] Au-induced faceting of the Si (5512) surface
    Dickinson, JW
    Moore, JC
    Baski, AA
    SURFACE SCIENCE, 2004, 561 (2-3) : 193 - 199
  • [7] Ga-induced restructuring of Si(5512)-2 x 1 reconstructed surface at room temperature
    Kumar, Praveen
    Kumar, Mahesh
    Mehta, B. R.
    Shivaprasad, S. M.
    SURFACE SCIENCE, 2011, 605 (15-16) : 1426 - 1430
  • [8] STM study of Si(113) 3 x 2-Ga surface
    Irokawa, Katsumi
    Nagura, Yuichiro
    Kobayashi, Hidekazu
    Hara, Shinsuke
    Fujishiro, Hiroki I.
    Miki, Hirofumi
    Kawazu, Akira
    Watanabe, Kazuyuki
    SURFACE SCIENCE, 2009, 603 (09) : 1197 - 1202
  • [9] Formation of Sb submonolayer phases on high index Si(5512) surface
    Kumar, M
    Paliwal, VK
    Joshi, AG
    Govind
    Shivaprasad, SM
    SURFACE SCIENCE, 2005, 596 (1-3) : 206 - 211
  • [10] Electronic structure of the Sb-induced Si(113)2 x 5 surface
    Ahn, J. R.
    Hwang, C. C.
    An, K. -S.
    SURFACE SCIENCE, 2006, 600 (12) : 2501 - 2504
12345