Built-In Reliability Design of a High-Frequency SiC MOSFET Power Module

被引：0

作者：

Li, Jianfeng ^{[1
]}

Gurpinar, Emre ^{[1
]}

Lopez-Arevalo, Saul ^{[1
]}

Castellazzi, Alberto ^{[1
]}

Mills, Liam

机构：

[1] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham NG7 2RD, England

来源：

2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA) | 2014年

关键词：

SiC MOSFET; multi-chip power modules; reliability;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the switch during both manufacturing and operation: structural simulations were carried out to identify the materials, geometry and sizes of constituent parts which would maximize reliability. Following hardware development, functional tests were carried out, showing that the module is suitable for high switching frequency operation without impairing efficiency, thus enabling a considerable reduction of system-level size and weight.

引用

页码：3718 / 3724

页数：7

共 50 条

[21] Reliability Analysis of SiC MOSFET Power Module for More Electric Aircraft Motor Drive Applications
O'Donnell, Shane
Wheeler, Pat
Castellazzi, Alberto
2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL SYSTEMS FOR AIRCRAFT, RAILWAY, SHIP PROPULSION AND ROAD VEHICLES & INTERNATIONAL TRANSPORTATION ELECTRIFICATION CONFERENCE (ESARS-ITEC), 2018,
[22] An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD
Fukunaga S.
Funaki T.
Harada S.
Kobayashi Y.
IEICE Electronics Express, 2019, 17 : 1 - 4
[23] Thermal design and simulation of MOSFET in high-frequency power supply based on thermal resistance network
Hu, Hai-La
Wang, Shi-Gang
Mo, Jin-Qiu
Fan, Jin-Qiu
Shanghai Jiaotong Daxue Xuebao/Journal of Shanghai Jiaotong University, 2010, 44 (02): : 180 - 184
[24] An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD
Fukunaga, Shuhei
Funaki, Tsuyoshi
Harada, Shinsuke
Kobayashi, Yusuke
IEICE ELECTRONICS EXPRESS, 2019, 16 (17):
[25] A Novel Packaging Method Using Flexible Printed Circuit Board for High-Frequency SIC Power Module
Yang, Fengtao
Wang, Laili
Wang, Jianpeng
Zhao, Cheng
Qi, Zhiyuan
Chen, Yang
Zhang, Yang
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018, : 48 - 53
[26] SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems
Gurpinar, Emre
Wiles, Randy
Ozpineci, Burak
Raminosoa, Tsarafidy
Zhou, Feng
Liu, Yanghe
Dede, Ercan M.
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 1722 - 1727
[27] A SiC double-sided stacked wire-bondless power module for high-frequency power electronic applications
Huang S.
Chen Z.
Journal of Microelectronics and Electronic Packaging, 2021, 18 (03): : 113 - 122
[28] Investigation of 1.2 kV SiC MOSFET for High Frequency High Power Applications
Sheng, Honggang
Chen, Zheng
Wang, Fred
Millner, Alan
2010 TWENTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2010, : 1572 - 1577
[29] Challenges in SiC power MOSFET design
Matocha, Kevin
SOLID-STATE ELECTRONICS, 2008, 52 (10) : 1631 - 1635
[30] Characterization of SiC power module for high switching frequency operation
Funaki, Tsuyoshi
Inoue, Hiroyasu
Sasagawa, Masashi
Nakamura, Takashi
IEICE ELECTRONICS EXPRESS, 2010, 7 (14): : 1008 - 1013

← 1 2 3 4 5 →