Built-In Reliability Design of a High-Frequency SiC MOSFET Power Module

被引：0
|
作者：
Li, Jianfeng [1 ]
Gurpinar, Emre [1 ]
Lopez-Arevalo, Saul [1 ]
Castellazzi, Alberto [1 ]
Mills, Liam
机构：
[1] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham NG7 2RD, England
来源：
2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA) | 2014年
关键词：
SiC MOSFET; multi-chip power modules; reliability;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the switch during both manufacturing and operation: structural simulations were carried out to identify the materials, geometry and sizes of constituent parts which would maximize reliability. Following hardware development, functional tests were carried out, showing that the module is suitable for high switching frequency operation without impairing efficiency, thus enabling a considerable reduction of system-level size and weight.
引用
收藏
页码：3718 / 3724
页数：7
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