New World-Record Efficiency for Pure-Sulfide Cu(In,Ga)S2 Thin-Film Solar Cell With Cd-Free Buffer Layer via KCN-Free Process

被引：87
|
作者：
Hiroi, Homare [1 ]
Iwata, Yasuaki [1 ]
Adachi, Shunsuke [1 ]
Sugimoto, Hiroki [1 ]
Yamada, Akira [2 ]
机构：
[1] Solar Frontier KK, Atsugi Res Ctr, Atsugi, Kanagawa 2430206, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528550, Japan
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2016年 / 6卷 / 03期
关键词：
Cd-free buffer layer; KCN-free process; puresulfide Cu(In; Ga)S-2;
D O I：
10.1109/JPHOTOV.2016.2537540
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
World-record conversion efficiency of 15.5%, which is a number independently certified by an external accredited laboratory, was achieved on a pure-sulfide Cu(In,Ga)S-2 (CIGS) thin-film solar cell fabricated by metal sputtering and H2S gas sulfurization. This is the highest conversion efficiency reported for pure-sulfide CIGS thin-film solar cells. We exceeded the limit of 15% efficiency thanks to the buffer layer optimization. The buffer layer consists of Cd-free materials, and the absorber was fabricated via a KCN-free process.
引用
收藏
页码：760 / 763
页数：4
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