Barrier height of Ga-pSi(p) Schottky diodes

被引：1
|
作者：
Patel, KD [1 ]
Modi, BP [1 ]
Srivastava, R [1 ]
机构：
[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
来源：
SOLID STATE PHENOMENA | 1997年 / 55卷
关键词：
Schottky diodes; gallium on p-silicon; atomic ordering; crystallography;
D O I：
10.4028/www.scientific.net/SSP.55.183
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ga-Si(p) diodes have been fabricated and investigated by making contact of liquid gallium on etched silicon (100) surface. Analysis of data on barrier height exhibits a prominent change in its value across its freezing point,It is belived to be related to the changes in the atomic ordering occurring due to change of phase associated with freezing of gallium.
引用
收藏
页码：183 / 185
页数：3
相关论文
共 50 条
  • [1] Barrier height of Ga-pSi(p) Schottky diodes
    Patel, K.D.
    Modi, B.P.
    Srivastava, R.
    Diffusion and Defect Data Pt.B: Solid State Phenomena, 1997, 55 : 183 - 185
  • [2] ON THE BARRIER HEIGHT OF AL/P-SI SCHOTTKY DIODES
    IOANNOU, DE
    HUANG, YJ
    MCLARTY, PK
    JOHNSON, SM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K223 - K226
  • [3] Barrier height inhomogeneity and its impact on (Al, In, Ga)N Schottky diodes
    Laurent, Matthew A.
    Gupta, Geetak
    Suntrup, Donald J., III
    DenBaars, Steven P.
    Mishra, Umesh K.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (06)
  • [4] INTERFACE STATES AND THE BARRIER HEIGHT OF SCHOTTKY DIODES
    WITTMER, M
    FREEOUF, JL
    PHYSICS LETTERS A, 1993, 173 (02) : 190 - 194
  • [5] On the effective barrier height in inhomogeneous Schottky diodes
    Osvald, J.
    2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM), 2018, : 125 - 128
  • [6] BARRIER HEIGHT MODIFICATION IN SCHOTTKY MIS DIODES
    SHOUSHA, AHM
    PHYSICS LETTERS A, 1982, 92 (06) : 293 - 296
  • [7] Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes
    Jadhav, Aakash
    Lyle, Luke A. M.
    Xu, Ziyi
    Das, Kalyan K.
    Porter, Lisa M.
    Sarkar, Biplab
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (04):
  • [8] BARRIER HEIGHT CHANGE IN MIS SCHOTTKY-BARRIER DIODES
    SINGH, JP
    SOLID-STATE ELECTRONICS, 1982, 25 (01) : 79 - 80
  • [9] BARRIER HEIGHT OF TITANIUM SILICIDE SCHOTTKY-BARRIER DIODES
    KIKUCHI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L894 - L895
  • [10] Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes
    Asubay, S.
    Gullu, O.
    Turut, A.
    VACUUM, 2009, 83 (12) : 1470 - 1474
12345