Effects of gamma-ray irradiation on quantum-well semiconductor lasers

被引：7
|
作者：
Sporea, D [1 ]
机构：
[1] Natl Inst Lasers Plasma & Radiat Phys, Laser Metrol & Standardizat Lab, Magurele, Romania
来源：
2004 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2004年
关键词：
external quantum efficiency; gamma-ray irradiation; quantum-well; radiation effects; responsivity; semiconductor laser diode; serial resistance; threshold current;
D O I：
10.1109/REDW.2004.1352920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigations were carried out on three types of commercially available quantum-well semiconductor laser diodes, irradiated by gamma-ray, in order to assess their behavior in ionizing radiation environments. The laser diodes emit in the visible range of the spectrum, with a maximum CW power of 5-8 mW. The diode's degradation was evaluated up to the total irradiation doses of 96 Mrad. The optical, electrical and optoelectronic characteristics were studied. The paper describes briefly the measuring set-up, and illustrates the main results.
引用
收藏
页码：137 / 144
页数：8
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