Total-Ionizing-Dose Induced Timing Window Violations in CMOS Microcontrollers

被引:3
|
作者
Diggins, Zachary J. [1 ]
Mahadevan, Nagabhushan [1 ]
Herbison, Daniel [1 ]
Karsai, Gabor [1 ]
Sierawski, Brian D. [1 ]
Barth, Eric [2 ]
Pitt, E. Bryn [2 ]
Reed, Robert A. [1 ]
Schrimpf, Ronald D. [1 ]
Weller, Robert. A. [1 ]
Alles, Michael L. [1 ]
Witulski, Arthur [1 ]
机构
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[2] Vanderbilt Univ, Dept Mech Engn, Nashville, TN 37235 USA
关键词
Microcontrollers; propagation delay; timing window; total ionizing dose (TID); TRANSISTORS;
D O I
10.1109/TNS.2014.2368125
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The total-ionizing-dose robustness of low power microcontrollers is investigated. Experiments reveal that with increasing total ionizing dose (TID), the "Timing Window Violations," i.e., inability of the instruction set to execute within the clock-cycle(s) lead to failures in microcontroller operations. Clock frequency and supply voltage of the microcontroller are varied to determine the maximum clock frequency at which the microcontroller can execute software subroutines without failure. Low power microcontrollers from two different manufacturers were tested. The maximum clock frequency decreases with increasing TID for both parts. A model for the degradation based on analysis of circuit level timing models is presented. The microcontroller robustness implications for system designers and ASIC designers are discussed.
引用
收藏
页码:2979 / 2984
页数:6
相关论文
共 50 条
  • [21] Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs
    Peng, Chao
    Hu, Zhiyuan
    Ning, Bingxu
    Huang, Huixiang
    Zhang, Zhengxuan
    Bi, Dawei
    En, Yunfei
    Zou, Shichang
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) : 503 - 505
  • [22] Demonstrating a Holographic Memory Having 100 Mrad Total-Ionizing-Dose Tolerance
    Ito, Yoshizumi
    Watanabe, Minoru
    Ogiwara, Akifumi
    PROCEEDINGS OF 2016 7TH INTERNATIONAL CONFERENCE ON MECHANICAL AND AEROSPACE ENGINEERING, (ICMAE), 2016, : 377 - 380
  • [23] Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of nMOSFETs
    Zhang, E. X.
    Fleetwood, D. M.
    Pate, N. D.
    Reed, R. A.
    Witulski, A. F.
    Schrimpf, R. D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4470 - 4475
  • [24] Total-ionizing-dose tolerance analysis of an optically reconfigurable gate array VLSI
    Watanabe, Minoru
    2015 IEEE INTERNATIONAL CONFERENCE ON SPACE OPTICAL SYSTEMS AND APPLICATIONS (ICSOS), 2015,
  • [25] Total-ionizing-dose tolerance analysis of an optically reconfigurable gate array VLSI
    Watanabe, Minoru
    2015 IEEE INTERNATIONAL CONFERENCE ON AEROSPACE ELECTRONICS AND REMOTE SENSING TECHNOLOGY (ICARES), 2015,
  • [26] Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs
    Teng, Jeffrey W.
    Ildefonso, Adrian
    Tzintzarov, George N.
    Ying, Hanbin
    Moradinia, Arya
    Wang, Peng Fei
    Li, Xun
    Zhang, En Xia
    Fleetwood, Daniel M.
    Cressler, John D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 949 - 957
  • [27] Total-Ionizing-Dose Tolerance of the configuration function of MAX3000A CPLDs
    Fujimori, Takumi
    Watanabe, Minoru
    2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2018, : 284 - 286
  • [28] Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs
    Jiang, Rong
    Zhang, En Xia
    McCurdy, Michael W.
    Wang, Pengfei
    Gong, Huiqi
    Yan, Dawei
    Schrimpf, Ronald D.
    Fleetwood, Daniel M.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) : 170 - 176
  • [29] Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
    Gong, Huiqi
    Liao, Wenjun
    Zhang, En Xia
    Sternberg, Andrew L.
    McCurdy, Michael W.
    Davidson, Jim L.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Shuvra, Pranoy Deb
    Lin, Ji-Tzuoh
    McNamara, Shamus
    Walsh, Kevin M.
    Alphenaar, Bruce W.
    Alles, Michael L.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (01) : 34 - 38
  • [30] Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS
    Zhou, Xin
    Yuan, Zhangyi'an
    Shu, Lei
    Qiao, Ming
    Lu, Zhenlin
    Zhao, Yuanfu
    Li, Zhaoji
    Zhang, Bo
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (04) : 593 - 596