Total-Ionizing-Dose Induced Timing Window Violations in CMOS Microcontrollers

被引:3
|
作者
Diggins, Zachary J. [1 ]
Mahadevan, Nagabhushan [1 ]
Herbison, Daniel [1 ]
Karsai, Gabor [1 ]
Sierawski, Brian D. [1 ]
Barth, Eric [2 ]
Pitt, E. Bryn [2 ]
Reed, Robert A. [1 ]
Schrimpf, Ronald D. [1 ]
Weller, Robert. A. [1 ]
Alles, Michael L. [1 ]
Witulski, Arthur [1 ]
机构
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[2] Vanderbilt Univ, Dept Mech Engn, Nashville, TN 37235 USA
关键词
Microcontrollers; propagation delay; timing window; total ionizing dose (TID); TRANSISTORS;
D O I
10.1109/TNS.2014.2368125
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The total-ionizing-dose robustness of low power microcontrollers is investigated. Experiments reveal that with increasing total ionizing dose (TID), the "Timing Window Violations," i.e., inability of the instruction set to execute within the clock-cycle(s) lead to failures in microcontroller operations. Clock frequency and supply voltage of the microcontroller are varied to determine the maximum clock frequency at which the microcontroller can execute software subroutines without failure. Low power microcontrollers from two different manufacturers were tested. The maximum clock frequency decreases with increasing TID for both parts. A model for the degradation based on analysis of circuit level timing models is presented. The microcontroller robustness implications for system designers and ASIC designers are discussed.
引用
收藏
页码:2979 / 2984
页数:6
相关论文
共 50 条
  • [1] Total-ionizing-dose effects in modern CMOS technologies
    Barnaby, H. J.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3103 - 3121
  • [2] Analyzing Total-Ionizing-Dose Induced Memory Window Degradation in Ferroelectric FinFET
    Woo, Sola
    Aabrar, Khandker Akif
    Datta, Suman
    Yu, Shimeng
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (01) : 84 - 88
  • [3] Total-ionizing-dose effects on isolation oxides in modern CMOS technologies
    Barnaby, Hugh J.
    Mclain, Michael
    Esqueda, Ivan Sanchez
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2): : 1142 - 1145
  • [4] Total-Ionizing-Dose induced degradation of several quartz oscillators
    Demidova, Alexandra, V
    Koroteev, Mikhail E.
    Zavorotnov, Dmitry, V
    Boychenko, Dmitry, V
    2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2018, : 312 - 314
  • [5] Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers
    Gong, Huiqi
    Liao, Wenjun
    Zhang, En Xia
    Sternberg, Andrew L.
    McCurdy, Michael W.
    Davidson, Jim L.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Shuvra, Pranoy Deb
    Lin, Ji-Tzuoh
    McNamara, Shamus
    Walsh, Kevin M.
    Alphenaar, Bruce W.
    Alles, Michael L.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 263 - 268
  • [6] Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers
    Liao, Wenjun
    Zhang, En Xia
    Alles, Michael L.
    Zhang, Cher Xuan
    Gong, Huiqi
    Ni, Kai
    Sternberg, Andrew L.
    Xie, Huikai
    Fleetwood, Daniel M.
    Reed, Robert A.
    Schrimpf, Ronald D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 233 - 238
  • [7] Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures
    Nergui, Delgermaa
    Teng, Jeffrey W.
    Hosseinzadeh, Mozghan
    Mensah, Yaw
    Li, Kan
    Gorchichko, Mariia
    Ildefonso, Adrian
    Ringel, Brett L.
    Zhang, En Xia
    Fleetwood, Daniel M.
    Cressler, John D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (05) : 1079 - 1084
  • [8] Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
    Gorchichko, Mariia
    Zhang, En Xia
    Wang, Pan
    Bonaldo, Stefano
    Schrimpf, Ronald D.
    Reed, Robert A.
    Linten, Dimitri
    Mitard, Jerome
    Fleetwood, Daniel M.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 687 - 696
  • [9] High total-ionizing-dose tolerance field programmable gate array
    Fujimori, Takumi
    Watanabe, Minoru
    2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [10] Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs
    Bonaldo, Stefano
    Zhang, En Xia
    Mattiazzo, Serena
    Paccagnella, Alessandro
    Gerardin, Simone
    Schrimpf, Ronald D.
    Fleetwood, Daniel M.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) : 2042 - 2050