Facile One-Step Fabrication of Ordered Ultra-Long Organic Microwires Film for Flexible Near-Infrared Photodetectors

被引:6
|
作者
Xing, Yuliang
Deng, Wei
Wang, Hui
Gong, Chao
Zhang, Xiujuan [1 ]
Jie, Jiansheng
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic Microwires; Near Infrared; Flexible Devices; Photodetectors; BENDING STABILITY; NANOWIRE ARRAYS; TRANSISTORS; GROWTH; SEMICONDUCTORS; EVAPORATION; SENSORS; FLOW; NANOCRYSTALS; NANORIBBONS;
D O I
10.1166/jnn.2015.9794
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Micro/nanoscale electronic devices, such as transistors and sensors, made from single-crystalline organic micro/nano-structures with tunable molecular/structural design are much smaller and more versatile than those that rely on conventional polycrystalline/amorphous organic films, but their development for mass production has been thwarted by difficulties in aligning and integrating the organic crystals required. Here, we developed an improved evaporation induced self-assemble method to accomplish large-area uniform growth of ultra-long methyl-squarylium (MeSq) microwires (MWs) films. The MWs could align along the dewetting direction of the solution with length over the entire substrate, thus lessening the requirement for precisely addressing the positions of MWs. Near infrared (NIR) photodetectors based on the ordered organic MWs film were directly constructed on Si/SiO2 substrate. The MeSq MWs showed high sensitivity to the NIR light with excellent stability and repeatability. To evaluate the potential applications of the organic MWs film in flexible and transparent electronics, flexible photodetectors were constructed by transferring the MWs film to polydimethylsiloxane (PDMS) substrate. Significantly, the device showed good flexibility and could stand a large bending stress due to the superior mechanical flexibility of the organic MWs. This characteristic opens new prospects for the applications of the MeSq MWs.
引用
收藏
页码:4450 / 4456
页数:7
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