Autooscillations under self-heating conditions in a semiconductor

被引：6

作者：

Melkikh, AV ^{[1
]}

Povzner, AA ^{[1
]}

机构：

[1] Ural State Tech Univ, Ekaterinburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 03期

关键词：

D O I：

10.1134/1.1565640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conditions for autooscillations in a semiconductor possessing an S-shaped current-voltage characteristic are considered. The period and amplitude of autooscillations are expressed as functions of the semiconductor bandgap width and the ratios of the characteristic times of the charge and inductance accumulation to that of the heat exchange with the ambient medium. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：224 / 225

页数：2

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