Fabrication of AlN/GaN MSM photodetector with platinum as schottky contacts

The epitaxial aluminium nitride (AlN) layer was fabricated on a silicon (111) substrate by solid phase radio frequency (RF) MBE The samples morphological characteristic was successfully studied by field emission SEM. Low photo-response of the hetero-structure layers is one of the main obstacles in order to fabricate a high performance of photodetector device. The platinum contacts on AlN/GaN metal-semiconductor-metal (MSM) photodetector were formed by RF sputtering machine. The conductivity behaviours, Schottky barrier height (SBH), photo-responses of the device were examined by source meter measurement. The SBH values of photo-device sensing were calculated as 0.488 eV and 0.479 eV for dark current and photo current, respectively. Good response times of the device were recorded as 21.48 ms and 12.69 ms for the bias voltage of 1 volt.