Design consideration for the improved Class-D inverter topology

被引：5
|
作者：
Lee, BK [1 ]
Suh, BS [1 ]
Hyun, DS [1 ]
机构：
[1] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
来源：
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 1998年 / 45卷 / 02期
关键词：
Class-D inverter; high-frequency resonant current stress; lossless capacitive snubber; overvoltage stress; RC snubber;
D O I：
10.1109/41.681220
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The characteristics and the superiority of the efficient snubber network for Class-D series resonant inverters are addressed in detail by comparison with conventional snubbers, i.e., the lossless capacitive snubber and the RC snubber, with respect to switching losses, overvoltage stresses, high-frequency resonant current stresses, and overall efficiency, Also, the optimal design scheme for it is considered and the analytical equations are derived in order to provide a straightforward and easy-to-design tool, The validity of the theoretical description is verified by testing on a 29-kHz MOSFET Class-D series resonant inverter rated at 1.2 kW.
引用
收藏
页码：217 / 227
页数：11
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