An Overview of Non-Volatile Memory Technology and the Implication for Tools and Architectures

被引:0
|
作者
Li, Hai [1 ]
Chen, Yiran [1 ]
机构
[1] Seagate Technol LLC, Alternat Technol Grp, Bloomington, MN USA
关键词
Universal memory; STT-RAM; R-RAM; MTJ device modleing; memory yield improvement;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used Spin-Transfer Torque Random Access Memory (STT-RAM) and Resistive Random Access Memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity.
引用
收藏
页码:731 / 736
页数:6
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