Energy and transport gaps in etched graphene nanoribbons

被引:53
|
作者
Molitor, F. [1 ]
Stampfer, C. [1 ]
Guettinger, J. [1 ]
Jacobsen, A. [1 ]
Ihn, T. [1 ]
Ensslin, K. [1 ]
机构
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
LAYER;
D O I
10.1088/0268-1242/25/3/034002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report transport measurements on etched graphene nanoribbons. We show that two distinct voltage (i.e. energy) scales can be experimentally extracted for characterizing the parameter regions of suppressed conductance at low charge density in graphene nanoribbons. The energy scales are related to the charging energy of localized states and to the strength of the disorder potential. We discuss the scaling behaviour of these two energy scales as a function of the minimum width omega for a number of different devices. Finally, we present a model based on Coulomb blockade, due to quantum dots forming inside the nanoribbon, explaining the observed energy scales.
引用
收藏
页数:7
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