Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

被引：26

作者：

Lu, Chi

Chen, Zhi ^{[1
]}

Saito, Kozo

机构：

[1] Univ Kentucky, Dept Elect & Comp Engn, Lexington, KY 40506 USA

[2] Univ Kentucky, Dept Mech Engn, Lexington, KY 40506 USA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2007年 / 122卷 / 02期

基金：

美国国家科学基金会;

关键词：

Ni; hydrogen sensor; MOS capacitor; C-V curve;

D O I：

10.1016/j.snb.2006.06.029

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 degrees C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：556 / 559

页数：4

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