Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

被引：26
|
作者：
Lu, Chi
Chen, Zhi [1 ]
Saito, Kozo
机构：
[1] Univ Kentucky, Dept Elect & Comp Engn, Lexington, KY 40506 USA
[2] Univ Kentucky, Dept Mech Engn, Lexington, KY 40506 USA
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2007年 / 122卷 / 02期
基金：
美国国家科学基金会;
关键词：
Ni; hydrogen sensor; MOS capacitor; C-V curve;
D O I：
10.1016/j.snb.2006.06.029
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 degrees C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：556 / 559
页数：4
相关论文
共 50 条
  • [1] Electrical Properties of the MOS Capacitor Hydrogen Sensor Based on the Ni/SiO2/Si Structure
    Pour, G. Behzadi
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 12 (02) : 130 - 135
  • [2] OntheVoltageandFrequencyDistributionofDielectricPropertiesandacElectricalConductivityinAl/SiO2/p-Si（MOS）Capacitors
    Ahmet Kaya
    Semsettin Altmdal
    Yasemin Safak Asar
    Zekayi Snmez
    Chinese Physics Letters, 2013, 30 (01) : 169 - 172
  • [3] Electroluminescence of MOS capacitors with Si-implanted SiO2
    Matsuda, T
    Nishio, M
    Ohzone, T
    Hori, H
    SOLID-STATE ELECTRONICS, 1997, 41 (06) : 887 - 893
  • [4] EFFECT OF SIO2 PRECIPITATION IN SI ON GENERATION CURRENTS IN MOS CAPACITORS
    PATRICK, WJ
    HU, SM
    WESTDORP, WA
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1399 - 1402
  • [5] Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors
    Palestri, P
    Selmi, L
    Pavesi, M
    Widdershoven, F
    Sangiorgi, E
    2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, : 38 - 41
  • [6] Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors
    Palestri, Pierpaolo
    Selmi, Luca
    Pavesi, Maura
    Widdershoven, Frans
    Sangiorgi, E.
    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2000, : 38 - 41
  • [7] Blue electroluminescence from MOS capacitors with Si-implanted SiO2
    Matsuda, T
    Nishihara, K
    Kawabe, M
    Iwata, H
    Iwatsubo, S
    Ohzone, T
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 1933 - 1941
  • [8] Visible electroluminescence from MOS capacitors with Si-implanted SiO2
    Matsuda, T
    Kawabe, M
    Iwata, H
    Ohzone, T
    IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (11): : 1895 - 1904
  • [9] Fowler-Nordheim tunneling in mos capacitors with Si-implanted SiO2
    Kameda, E
    Matsuda, T
    Emura, Y
    Ohzone, T
    SOLID-STATE ELECTRONICS, 1998, 42 (11) : 2105 - 2111
  • [10] Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors
    da Silva, EF
    de Vasconcelos, EA
    Freire, VN
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 567 - 574
12345