Status 157nm lithography development at IMEC

被引:2
|
作者
Ronse, K [1 ]
De Bisschop, P [1 ]
Eliat, A [1 ]
Goethals, AM [1 ]
Hermans, J [1 ]
Jonckheere, R [1 ]
Van Den Heuvel, D [1 ]
Van Roey, F [1 ]
Beckx, S [1 ]
Wouters, J [1 ]
de Marneffe, JF [1 ]
Oneil, T [1 ]
Tirri, B [1 ]
Sewell, H [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
来源
关键词
157nm lithography; hard pellicles; vacuum UV; step and scan; CaF2;
D O I
10.1117/12.485513
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
157nm lithography is currently considered as the main technology for the manufacturing of critical 65nm node layers and beyond. After a number of potential show stoppers of 157nm have been removed in the last three years, the final phase of development will now start based on the first full-field step and scan exposure systems, that will be inserted in the next 6 months. This paper describes the status and progress of the IMEC 157nm program, that is aiming to remove the remaining 157nm engineering challenges. Despite the fact that the first full field scanner (ASML Micrascan VII) will ship next month to IMEC, the investigation on a number of fall-field issues already started. Results on reticle handling including vacuum ultra violet cleaning, on hard pellicle printing and on 157nm resist full field patterning are discussed in this paper.
引用
收藏
页码:640 / 649
页数:10
相关论文
共 50 条
  • [31] High-resolution 157nm imaging for lithography and micromachining applications
    Gower, M
    Cashmore, J
    Whitfield, M
    Grünewald, P
    SECOND INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2002, 4426 : 401 - 407
  • [32] Measurement of total integrated scatter of optical coatings for 157nm lithography
    Saito, T
    Saito, J
    Nakamura, E
    Kudo, T
    Kagaya, M
    Takahashi, T
    OPTICAL METROLOGY ROADMAP FOR THE SEMICONDUCTOR, OPTICAL, AND DATA STORAGE INDUSTRIES II, 2001, 4449 : 22 - 29
  • [33] First results from AIMS beta tool for 157nm lithography
    Teuber, S
    Higashikawa, I
    Urbach, JP
    Schilz, CM
    Koehle, R
    Zibold, AM
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 1648 - 1657
  • [34] 157nm photodissociation of polyamides
    Cefalas, AC
    Sarantopoulou, E
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 465 - 468
  • [35] Long pulse duration of F2 laser for 157nm lithography
    Watanabe, H
    Kitatochi, N
    Kakizaki, K
    Tada, A
    Sakuma, J
    Ariga, T
    Hotta, K
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 1074 - 1079
  • [36] Evaluation of high transmittance attenuated phase shifting mask for 157nm lithography
    Yamabe, O
    Watanabe, K
    Itani, T
    MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 312 - 313
  • [37] 157nm lithography with high numerical aperture lens for the 70nm technology node
    Suganaga, T
    Kanda, N
    Kim, JH
    Yamabe, O
    Watanabe, K
    Furukawa, T
    Miyoshi, S
    Itani, T
    Cashmore, J
    Gower, M
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 584 - 593
  • [38] Feasibility study of SCAAM type Alt-PSM for 157nm lithography
    Morikawa, Y
    Kokubo, H
    Noguchi, K
    Sasaki, S
    Mohri, H
    Hoga, M
    Kanda, N
    Irie, S
    Watanabe, K
    Suganaga, T
    Itani, T
    OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3, 2003, 5040 : 1137 - 1145
  • [39] A 157nm immersion microstepper
    Switkes, M
    Bloomstein, TM
    Rothschild, M
    Arriola, EW
    Morrison, TH
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 237 - 242
  • [40] Performance data on new turnable attenuating PSM for 193nm and 157nm lithography
    Becker, H
    Schmidt, F
    Sobel, F
    Renno, M
    Chey, J
    Angelopoulos, M
    Knapp, K
    Hess, G
    PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI, 2004, 5446 : 542 - 549