Silver patterning by reactive ion beam etching for microelectronics application

被引：0

作者：

Gao, L ^{[1
]}

Gstoettner, J ^{[1
]}

Emling, R ^{[1
]}

Wang, P ^{[1
]}

Hansch, W ^{[1
]}

Schmitt-Landsiedel, D ^{[1
]}

机构：

[1] Tech Univ Munich, Inst Tech Elect, D-80333 Munich, Germany

来源：

MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004 | 2004年 / 812卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dry etching of silver for the metallization in microelectronics is investigated. Etching is performed using an electron-cyclotron-resonance reactive-ion-beam-etching system (ECR-RIBE) in an Ar/CF4 or Ar/CF4/O-2 mixture. The etch characteristics are strongly affected by ion energy (beam voltage and microwave energy); the O-2 concentration in the reactive mixture has only a small effect. An anisotropic, smooth etch profile and clean surface are obtained. Focused ion beam (FIB) and atomic force microscopy (AFM) have been used to study the etched profile and the roughness, respectively.

引用

页码：185 / 190

页数：6

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