Dry fabrication of microdevices by the combination of focused ion beam and cryogenic deep reactive ion etching

被引:22
|
作者
Chekurov, N. [1 ]
Grigoras, K. [2 ]
Sainiemi, L. [2 ]
Peltonen, A.
Tittonen, I. [1 ]
Franssila, S. [2 ]
机构
[1] Aalto Univ, Sch Sci & Technol, Dept Micro & Nanosci, FI-00076 Aalto, Finland
[2] Aalto Univ, Sch Sci & Technol, Dept Mat Sci & Engn, FI-00076 Aalto, Finland
基金
芬兰科学院;
关键词
D O I
10.1088/0960-1317/20/8/085009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we demonstrate silicon microdevice fabrication by a combination of focused ion beam (FIB) and cryogenic deep reactive ion etching (DRIE). Applying FIB treatment only to a thin surface layer enables very high writing speed compared with FIB milling. The use of DRIE then defines the micro- and nanodevices utilizing the FIB-modified silicon as a mask. We demonstrate the ability to create patterns on highly 3D structures, which is extremely challenging by other nanofabrication methods. The alignment of optically made and FIB-defined patterns is also demonstrated. We also show that complete microelectromechanical systems (MEMS) can be fabricated by this method by presenting a double-ended tuning fork resonator as an example. Extremely short process time is achieved as the full fabrication cycle from mask design to electrical measurements can be completed during one working day.
引用
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页数:6
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