Localized Gallium Doping and Cryogenic Deep Reactive Ion Etching in Fabrication of Silicon Nanostructures

被引：0

作者：

Chekurov, Nikolai ^{[1
]}

Grigoras, Kestutis ^{[1
]}

Peltonen, Antti ^{[1
]}

Franssila, Sami ^{[1
]}

Tittonen, Ilkka ^{[1
]}

机构：

[1] Helsinki Univ Technol, Dept Micro & Nanosci, FIN-02015 Helsinki, Finland

来源：

ION BEAMS AND NANO-ENGINEERING | 2010年 / 1181卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a novel fabrication method to create controlled 3-dimensional silicon nanostructures with the lateral dimensions that are less than 50 nm as a result of a rapid clean room compatible process. We also demonstrate periodic and nonperiodic lattices of nanopillars in predetermined positions with the minimum pitch of 100 nm. One of the uses of this process is to fabricate suspended silicon nanowhiskers.

引用

页码：21 / 26

页数：6

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