Photoelectrical Properties of High-index Facets ZnO Nanobelts

被引：3
|
作者：
Sun, Li [1 ]
Tan, Dongchen [2 ]
Liu, Yongchen [3 ]
Jiang, Chengming [2 ]
机构：
[1] JinLing Inst Technol, Sch Mech & Elect Engn, Nan Jing 210014, Peoples R China
[2] Dalian Univ Technol, Sch Mech Engn, Dalian 116024, Peoples R China
[3] Huaiyin Inst Technol, Sch Traff Engn, Huaian 223003, Peoples R China
来源：
CHEMISTRY LETTERS | 2021年 / 50卷 / 05期
关键词：
ZnO nanobelt; High-index facet; Photoelectrical properties; NANOROD ARRAYS; CONTROLLABLE GROWTH; PHOTODETECTORS; SURFACE; NANOWIRES; SIZE;
D O I：
10.1246/cl.210030
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
ZnO nanobelts (NBs) with high-index facets are synthesized by a single-step chemical-vapor-solid method. The new ZnO NBs with a high-index of the main plane surface are {2, -1, -1,0} and the high-index facet as the side (0, 10, -10,1). This high-index facets NBs photo-sensor is fabricated and shows obvious current changes (>230 times) with a wide range intensity change of 365nm ultraviolet (UV) light illumination. Compared with the normal flat ZnO NBs, the on/off ratio can improve 10 fold under the same conditions.
引用
收藏
页码：1045 / 1048
页数：4
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