InGaAs/AlAsSb quantum cascade lasers

被引：61
|
作者：
Revin, DG
Wilson, LR
Zibik, EA
Green, RP
Cockburn, JW [1 ]
Steer, MJ
Airey, RJ
Hopkinson, M
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr III V Technol, Sheffield S1 3JD, S Yorkshire, England
[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.1814798
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The In0.53Ga0.47As/AlAs0.56Sb0.44 heterostructure system is of significant interest for the development of high-performance intersubband devices due to its very large conduction band offset (DeltaE(c)similar to1.6 eV) and lattice-matched compatibility with well-established InP-based waveguide technology. In this letter, we report the realization of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade lasers emitting at lambdasimilar to4.3 mum. The highest-performance devices have low-temperature (20 K) threshold currents of similar to6 kA/cm(2) and display laser action up to a maximum temperature of 240 K, with a characteristic temperature of T(0)similar to150 K. (C) 2004 American Institute of Physics.
引用
收藏
页码：3992 / 3994
页数：3
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