Electrical Characterization of Interface States in In/p-Si Schottky Diode From I-V Characteristics

Interfaces state density of In/p-Si Schottky diode has been determined using experimental non ideal forward bias current voltage (I-V) characteristics. The diode showed non ideal I-V behavior with an ideality factor of 1.91 and was thought effects of interfacial oxide layer. Considering that the interface states localized at the interfacial layer-semiconductor interface are in equilibrium with the semiconductor, the energy distribution of the interface states was exactly determined from the forward bias I-V characteristics by taking account voltage dependence barrier height. The I-V characteristics were used for determining the voltage dependence barrier height. Although the change in barrier height with applied bias is small, it is important for exactly determining the shape of the interface state density distribution curve.