Femtosecond laser ablation of polytetrafluoroethylene (Teflon) in ambient air

被引:56
|
作者
Wang, ZB
Hong, MH
Lu, YF
Wu, DJ
Lan, B
Chong, TC
机构
[1] Data Storage Inst, Singapore 117608, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117608, Singapore
关键词
D O I
10.1063/1.1568154
中图分类号
O59 [应用物理学];
学科分类号
摘要
Teflon, polytetrafluorethylene (PTFE), is an important material in bioscience and medical application due to its special characteristics (bio-compatible, nonflammable, antiadhesive, and heat resistant). The advantages of ultrashort laser processing of Teflon include a minimal thermal penetration region and low processing temperatures, precision removal of material, and good-quality feature definition. In this paper, laser processing of PTFE in ambient air by a Ti:sapphire femtosecond laser (780 nm, 110 fs) is investigated. It is found that the pulse number on each irradiated surface area must be large enough for a clear edge definition and the ablated depth increases with the pulse number. The air ionization effect at high laser fluences not only degrades the ablated structures quality but also reduces the ablation efficiency. High quality microstructures are demonstrated with controlling laser fluence below a critical fluence to exclude the air ionization effect. The ablated microstructures show strong adhesion property to liquids and clear edges that are suitable for bio-implantation applications. Theoretical calculation is used to analyze the evolution of the ablated width and depth at various laser fluences. (C) 2003 American Institute of Physics.
引用
收藏
页码:6375 / 6380
页数:6
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