Re-evaluating simple lambda based design rules for low K1 lithography process control

Due to the continuing decrease of the Rayleigh lithographic K1 factor used in advanced semiconductor technology, the non-linearity between designed and printed circuit images continues to increase. This increasing non-linearity has significant implications for the layout design rules with advanced technology. Recently, industry pundits have speculated that lithographic K1 factors can go far below current value [1]. This paper aims to understand the impact of low K1 lithography upon a set of basic, company independent, layout design rules, the lambda based rules proposed by Mead and Conway [2]. The results show that even with the use of aggressive optical proximity correction (OPC) techniques, significant changes in layout design rules will have to be made in order to extend lithographic capability to the low K1 regime.