Variable-range-hopping conduction via indium impurity states in Pb0.78Sn0.22Te solid solution

被引：2
|
作者：
Nemov, SA
Gasumyants, VÉ
Proshin, VI
Ravich, YV
Potapova, DA
机构：
[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[2] Herzen Russian State Pedagog Univ, St Petersburg 191186, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 08期
关键词：
D O I：
10.1134/1.1188094
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Seebeck coefficient S was measured in a wide temperature range T < 100 K in Pb0.78Sn0.22Te solid solutions doped with 3 at. % of In, with additional Cl doping of up to 3 at. %. The temperature derivative partial derivative\S\/partial derivative T changes its sign from negative to positive below 100 K. Theoretical estimations in terms of hopping conduction via highly localized indium-related states show that the transition to variable-range-hopping conduction must occur at temperatures of about 50-100 K, in agreement with the obtained experimental data. (C) 2000 MAIK "Nauka/Interperiodica".
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页码：889 / 890
页数：2
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