Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography

A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half-pitch but at the expense of a low sensitivity. To improve sensitivity a 3D Monte Carlo simulation is used that utilizes a secondary and Auger electron generation model. The simulation suggests that the sensitivity can be dramatically improved while maintaining high resolution by incorporating appropriate chemical functionality around the metal-organic core. The new resists designs based on the simulation have the increased sensitivity expected and illustrate the value of the simulation approach.