Metal-insulator oscillations in a two-dimensional electron-hole system

被引：27
|
作者：
Nicholas, RJ
Takashina, K
Lakrimi, M
Kardynal, B
Khym, S
Mason, NJ
Symons, DM
Maude, DK
Portal, JC
机构：
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Max Planck Inst Festkorperforsch, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France
[3] CNRS, F-38042 Grenoble 9, France
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 11期
关键词：
D O I：
10.1103/PhysRevLett.85.2364
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
引用
收藏
页码：2364 / 2367
页数：4
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