Low-k BCB passivation on AlGaN-GaN HEMT fabrication

被引：14

作者：

Wang, WK ^{[1
]}

Lin, CH ^{[1
]}

Lin, PC ^{[1
]}

Lin, CK ^{[1
]}

Huang, FH ^{[1
]}

Chan, YJ ^{[1
]}

Chen, GT ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 12期

关键词：

benzocyclobutene (BCB) passivation; GaNHEMT; reliability;

D O I：

10.1109/LED.2004.838322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the stress-induced polarization effect on the GaN HEMTs, the surface passivation of the device is critical and is deserved to conduct a detailed study. It has been proven that the GaN HEMTs demonstrate nondispersive pulsed current-voltage (I-V) characteristics and better microwave power performances after passivating the Si3N4 film on the GaN surface. In this letter, we proposed to use the BCB material, a negative photoresist with a low-K characteristic, as the surface passivation layer on GaN HEMTs fabrication. After comparing the do I-V, pulsed I-V, RF small-signal, microwave power characteristics, and device reliability, this BCB-passivated GaN HEMT achieved better performance than the Si3N4 passivated device. Index Tenns-Benzocyclobutene (BCB) passivation, GaN HEMT, reliability.

引用

页码：763 / 765

页数：3

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