Interdiffusion in amorphous Nb/Si multilayers

被引：16
|
作者：
Bochnícek, Z
Vávra, I
机构：
[1] Masaryk Univ, Fac Sci, Dept Gen Phys, CS-61137 Brno, Czech Republic
[2] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
来源：
MATERIALS LETTERS | 2000年 / 45卷 / 02期
关键词：
Nb/Si multilayer; interdiffusion; thermal stability;
D O I：
10.1016/S0167-577X(00)00089-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interdiffusion in amorphous Nb/Si multilayers has been studied using X-ray optical reflection and TEM in a temperature range from 150 degrees C to 350 degrees C. In the whole temperature scale, the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed, which fits very well to the Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：120 / 124
页数：5
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