Highly reliable THz hermetic detector based on InGaAs/InP Schottky barrier diode

被引：7
|
作者：
Shin, Jun-Hwan [1 ]
Park, Dong Woo [1 ]
Lee, Eui Su [1 ]
Kim, Mugeon [1 ]
Lee, Dong Hun [2 ]
Lee, Il-Min [1 ]
Park, Kyung Hyun [1 ]
机构：
[1] Elect & Telecommun Res Inst, Terahertz Res Sect, Daejeon 34129, South Korea
[2] Elect & Telecommun Res Inst, Photon Wireless Convergence Components Res Sect, Daejeon 34129, South Korea
来源：
INFRARED PHYSICS & TECHNOLOGY | 2021年 / 115卷
关键词：
THz wave detector; Schottky barrier diode; Zero-bias detection; Reliability test; Hermetic package; DESIGN;
D O I：
10.1016/j.infrared.2021.103736
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We demonstrate on n-InGaAs/n+-InP hetero-epitaxial structure based low-barrier Schottky barrier diode with integrated antenna for broadband THz detection. These devices showed refined and uniform nonlinear rectifying characteristics. Based on this device, a compact and robust hermetic packaged module was fabricated. The developed module showed stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt change of temperature. The detection performance of module was characterized by frequency domain spectroscopy system, and as a result, it had a detectable bandwidth of 0.1-0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1.10-9 W/Hz0.5 at 300 GHz.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Wideband Modeling of CMOS Schottky Barrier Diode Detectors for THz Radiometry
    van Berkel, Sven
    Malotaux, Eduard Satoshi
    de Martino, Carmine
    Spirito, Marco
    Cavallo, Daniele
    Neto, Andrea
    Llombart, Nuria
    IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2021, 11 (05) : 495 - 507
  • [22] SUPERCONDUCTOR-SEMICONDUCTOR SCHOTTKY-BARRIER DIODE DETECTOR
    MCCOLL, M
    MILLEA, MF
    SILVER, AH
    APPLIED PHYSICS LETTERS, 1973, 23 (05) : 263 - 264
  • [23] A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode
    刘晓宇
    张勇
    夏德娇
    任田昊
    周静涛
    郭栋
    金智
    Chinese Physics Letters, 2017, 34 (07) : 55 - 58
  • [24] A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode
    刘晓宇
    张勇
    夏德娇
    任田昊
    周静涛
    郭栋
    金智
    Chinese Physics Letters, 2017, (07) : 55 - 58
  • [25] A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode
    Liu, Xiao-Yu
    Zhang, Yong
    Xia, De-Jiao
    Ren, Tian-Hao
    Zhou, Jing-Tao
    Guo, Dong
    Jin, Zhi
    CHINESE PHYSICS LETTERS, 2017, 34 (07)
  • [26] SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS
    ALFEROV, ZI
    BOSYI, VI
    GORELENOK, AT
    IVASHCHUK, AV
    ILINSKAYA, ND
    MIZEROV, MN
    MOKINA, IA
    REKHVIASHVILI, DN
    SHMIDT, NM
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 14 (19): : 1807 - 1810
  • [27] Design Guidelines for Recessed Schottky Barrier AlN/GaN Diode for THz Applications
    Soni, Ankit
    Shrivastava, Mayank
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (05) : 2196 - 2204
  • [28] Characteristics of Schottky Diode Detector based on Au/GaAs and Au/Inp Application to Radar Detection System
    Reguieg, Khadidja
    Souar, Zeggai
    Becharef, Ramdan
    2015 16TH INTERNATIONAL CONFERENCE ON SCIENCES AND TECHNIQUES OF AUTOMATIC CONTROL AND COMPUTER ENGINEERING (STA), 2015, : 89 - 93
  • [29] SCHOTTKY-BARRIER DIODE AS AN INFRARED LOW-LEVEL DETECTOR
    VANDERZIEL, A
    PHYSICA B & C, 1976, 81 (01): : 111 - 113
  • [30] EMISSION CHARACTERISTICS OF SCHOTTKY-BARRIER INGAAS-INP-AG SEMICONDUCTOR HETEROSTRUCTURES
    MUSATOV, AL
    IZRAELYANTS, KR
    KOROTKIKH, VL
    FILIPPOV, SL
    RUSSU, EV
    DYAKONU, II
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 952 - 956
12345