Highly reliable THz hermetic detector based on InGaAs/InP Schottky barrier diode

被引：7
|
作者：
Shin, Jun-Hwan [1 ]
Park, Dong Woo [1 ]
Lee, Eui Su [1 ]
Kim, Mugeon [1 ]
Lee, Dong Hun [2 ]
Lee, Il-Min [1 ]
Park, Kyung Hyun [1 ]
机构：
[1] Elect & Telecommun Res Inst, Terahertz Res Sect, Daejeon 34129, South Korea
[2] Elect & Telecommun Res Inst, Photon Wireless Convergence Components Res Sect, Daejeon 34129, South Korea
来源：
INFRARED PHYSICS & TECHNOLOGY | 2021年 / 115卷
关键词：
THz wave detector; Schottky barrier diode; Zero-bias detection; Reliability test; Hermetic package; DESIGN;
D O I：
10.1016/j.infrared.2021.103736
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We demonstrate on n-InGaAs/n+-InP hetero-epitaxial structure based low-barrier Schottky barrier diode with integrated antenna for broadband THz detection. These devices showed refined and uniform nonlinear rectifying characteristics. Based on this device, a compact and robust hermetic packaged module was fabricated. The developed module showed stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt change of temperature. The detection performance of module was characterized by frequency domain spectroscopy system, and as a result, it had a detectable bandwidth of 0.1-0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1.10-9 W/Hz0.5 at 300 GHz.
引用
收藏
页数：5
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