Kinetics and depth distributions of oxygen implanted into Si analyzed by the Monte Carlo simulation of extended TRIM

We precisely measure the depth profiles of 50-200 keV O-18(+) implanted into Si and SiO2 by secondary ion mass spectrometry (SIMS) and then best-fit the simulated profiles to the observed ones by taking adequate parameters in the power law approximation for their stopping powers. The observed and best-fitted depth profiles are compared with the various versions of TRIM (TRansport of Ions in Matter) codes. Next, the oxygen depth distributions in Si for high-dose implantation are determined by Rutherford back-scattering (RES) followed by computer simulated spectrum analysis. We extend the TRIM code to consider sputter-erosion, redistribution of implanted oxygen, a swelling effect and composition change during the implantation. The O-profiles derived from the RES analysis are compared with those calculated by the extended TRIM. The present analysis revealed that the O-atoms implanted at 550 degrees C migrated toward the surface before reaching the stoichiometry (SiO2). The diffusion coefficient was estimated to be about 1 x 10(-14) cm(2)/s; which was about 2 orders of magnitude larger than the value for O-16 in crystalline Si at 550 degrees C. This is possibly due to the induced dense defects distributed from the mean depth of O-16 toward the surface (enhanced diffusion).