1.8-V 3.1-10.6-GHz CMOS low-noise amplifier for ultra-wideband applications

被引：0
|
作者：
Lu, Y [1 ]
Yeo, KS [1 ]
Ma, JG [1 ]
Do, MA [1 ]
Lu, ZH [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Circuits & Syst, Singapore 2263, Singapore
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2005年 / 44卷 / 03期
关键词：
low-noise amplifier; ultra-wideband; RFCMOS;
D O I：
10.1002/mop.20616
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel CMOS low-noise amplifier (LNA) for 3.1-10.6-GHz ultra-wideband (UWB) applications is presented in this paper. As opposed to most of the previously reported UWB LNAs, which are based on SiGe technology, the proposed UWB LAA is designed based on chartered semiconductor manufacturing (CSM) 0.18-mum 1.8-V standard RFCMOS technology. The prelayout and post-layout circuit simulation results show that low noise figure, good input and output matching, a relatively flat gain in the 3.1-10.6-GHz UWB band, and low power consumption features are all achieved in the proposed CMOS UWB LNA. (C) 2005 Wiley Periodicals, Inc.
引用
收藏
页码：299 / 302
页数：4
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