An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier

被引：4

作者：

Huang, Li-Hsien ^{[1
]}

Chiou, Hwann-Kaeo ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, 300 Jhongda Rd, Taoyuan, Taiwan

来源：

2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2020年

关键词：

GaN on SiC; multi-way combining network; power per area ratio; watt-level power amplifier; X-band;

D O I：

10.1109/APMC47863.2020.9331325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN (TM) 0.25-mu m GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1x1.65 mm(2). The proposed PA achieves a power per area ratio of 4.3 W/mm(2) which is the best figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).

引用

页码：257 / 259

页数：3

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