Multimode Interference Power-Splitter Using InP-Based Deeply Etched Hybrid Plasmonic Waveguide

被引:45
|
作者
Nikoufard, Mahmoud [1 ]
Alamouti, Masoud Kazemi [1 ]
Pourgholi, Soheil [1 ]
机构
[1] Univ Kashan, Dept Elect, Fac Elect & Comp Engn, Kashan 8731753153, Iran
关键词
Coupler; hybrid plasmonic waveguide; InGaAsP materials; multimode interference power splitter; photonic integrated circuits; POLARIZATION ROTATOR; DIRECTIONAL COUPLER; NANO-SCALE; COMPACT; SUBSTRATE;
D O I
10.1109/TNANO.2017.2688397
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The present study proposes a novel nanoscale multimode interference (MMI) power splitter utilizing an InP-based hybrid plasmonic waveguide at an optical communication wavelength. The layer stack has the potential to realize monolithic integrated hybrid plasmonic passive and active components. The 1 x 2, 1 x 3, and 2 x 2 MMI power splitters were simulated and optimized using a three-dimensional finite difference time domain method. The effect of MMI length, width, and wavelength on optical power transmission was investigated. Transmission was higher than 90% at 1.55 mu m wavelengths. This study also presents an ultracompact shallow to deep transition between shallow-etched conventional waveguide and a hybrid plasmonic waveguide on an InP-substrate. It was shown that shallow to deep transition with a length of 2 mu m has a coupling efficiency of 87.5%.
引用
收藏
页码:477 / 483
页数:7
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