Study of mask process development for EUVL

被引：9

作者：

Abe, T ^{[1
]}

Nishiguchi, M ^{[1
]}

Amano, T ^{[1
]}

Motonaga, T ^{[1
]}

Sasaki, S ^{[1
]}

Mohri, H ^{[1
]}

Hayashi, N ^{[1
]}

Tanaka, Y ^{[1
]}

Yamanashi, H ^{[1
]}

Nishiyama, I ^{[1
]}

机构：

[1] Dai Nippon Printing Co Ltd, Elect Device Lab, Kamifukuoka, Saitama 3568507, Japan

来源：

PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI | 2004年 / 5446卷

关键词：

EUVL; mask; absorber layer; buffer layer; dry etching; FIB; GAE; AFM;

D O I：

10.1117/12.557817

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

EUVL mask process of absorber layer dry etching and defect repair were evaluated. TaGeN and Cr were selected for absorber layer and buffer layer, respectively. These absorber layer and buffer layer were coated on 6025 Qz substrate. Two dry etching processes were evaluated for absorber layer etching. One is CF4 gas process and the other is C12 gas process. CD uniformity, selectivity, cross section profile and resist damage were evaluated for each process. FIB-GAE and AFM machining were applied for absorber layer repair test. XeF2 gas was used for FIB-GAE. Good selectivity between absorber layer and buffer layer was obtained using XeF2 gas. However, XeF2 gas causes side etching of TaGeN layer. AFM machining repair technique was demonstrated for TaGeN layer repair.

引用

页码：832 / 840

页数：9

共 50 条

[1] Development of mask materials for EUVL
Heckle, C
Hrdina, K
Ackerman, B
Navan, D
[J]. 22ND ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2002, 4889 : 1113 - 1120
[2] Study of removal process for buffer layer on multilayer of EUVL mask
Hoshino, E
Ogawa, T
Takahashi, M
Hoko, H
Yamanashi, H
Hirano, N
Chiba, A
Lee, BT
Ito, M
Okazaki, S
[J]. 17TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2001, 4349 : 13 - 17
[3] Progress towards the development of a commercial tool and process for EUVL mask blanks
Ma, A
Kearney, P
Krick, D
[J]. Emerging Lithographic Technologies IX, Pts 1 and 2, 2005, 5751 : 168 - 177
[4] Status of EUVL mask development in Europe
Peters, JH
[J]. Photomask and Next-Generation Lithography Mask Technology XII, Pts 1 and 2, 2005, 5853 : 297 - 307
[5] Development of EUVL mask blank in AGC
Sugiyama, Takashi
Kojima, Hiroshi
Ito, Masabumi
Otsuka, Kouji
Yokoyama, Mika
Mikami, Masaki
Hayashi, Kazuyuki
Matsumoto, Katsuhiro
Kikugawa, Shinya
[J]. PHOTOMASK TECHNOLOGY 2006, PTS 1 AND 2, 2006, 6349
[6] EUVL mask process development and verification using advanced modeling and characterization techniques
Green, Michael
Lallement, Romain
Ramadan, Mohamed
Dunn, Derren
Kamberian, Henry
Sieg, Stuart
Ham, Young
Progler, Chris
[J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY XI, 2020, 11323
[7] Development status of EUVL mask blank and substrate
Hirabayashi, Yusuke
[J]. PHOTOMASK TECHNOLOGY 2011, 2011, 8166
[8] Evaluation of multilayer damage in EUVL mask fabrication process
Tanaka, Y
Nishiyama, I
Abe, T
Sasaki, S
Hayashi, N
[J]. 24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 1377 - 1384
[9] Study of novel EUVL mask absorber candidates
Wu, Meiyi
Thakare, Devesh
De Marneffe, Jean-Francois
Jaenen, Patrick
Souriau, Laurent
Opsomer, Karl
Soulie, Jean-Philippe
Erdmann, Andreas
Mesilhy, Hazem
Naujok, Philipp
Foltin, Markus
Soltwisch, Victor
Saadeh, Qais
Philipsen, Vicky
[J]. JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, 2021, 20 (02):
[10] EUVL mask substrate defect print study
Cullins, Jerry
Tezuka, Yoshihiro
Nisiyama, Iwao
Hashimoto, Takeo
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES XI, PTS 1 AND 2, 2007, 6517

← 1 2 3 4 5 →