Development status of EUVL mask blank and substrate

被引:6
|
作者
Hirabayashi, Yusuke [1 ]
机构
[1] Asahi Glass Co Ltd, Hitachinaka, Ibaraki 3120063, Japan
来源
PHOTOMASK TECHNOLOGY 2011 | 2011年 / 8166卷
关键词
Extreme ultraviolet lithography; Mask blank;
D O I
10.1117/12.897266
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Asahi Glass Company (AGC) has been developing the extreme ultra violet (EUV) lithography mask blank and polished substrate since 2003, including the developments of all essential materials and processes: the low thermal expansion material (LTEM), the material developments of the reflective, capping and absorber films, the process developments of the substrate polishing, cleaning, film deposition and resist film coating processes. In this paper, we present the current development status of the full-stack EUV mask blank and polished substrate which are the most suitable for the EUV lithography process development with EUV pre-production exposure tools. We report the development progress of the reflective multilayer-coated LTEM substrate by showing its critical performances with those of 2010 achievements, which include the substrate flatness, the EUV optical properties of the Mo/Si reflective layers and the defect of LTEM substrate and reflective layer. The performances of the Ta-based absorber and the resist films are explained as well to show the readiness of the EUV mask blank suitable for various kinds of process developments of the EUV lithography.
引用
收藏
页数:6
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